De Keersgieter, An: search on Z-Library

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1

Scalability of the Si/sub 1-x/Ge/sub x/ source/drain technology for the 45-nm technology node and beyond

Eneman, G., Verheyen, P., Rooyackers, R., Nouri, F., Washington, L., Schreutelkamp, R., Moroz, V., Smith, L., An De Keersgieter, Jurczak, M., Kristin De Meyer

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 609 KB

english, 2006

2

On the efficiency of stress techniques in gate-last n-type bulk FinFETs

Geert Eneman, Nadine Collaert, Anabela Veloso, An De Keersgieter, Kristin De Meyer, Thomas Y. Hoffmann, Naoto Horiguchi, Aaron Thean

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 1.40 MB

english, 2012

3

Si 1- y Ge y or Ge 1- z Sn z Source/Drain Stressors on Strained Si 1- x Ge x -Channel P-Type Field-Effect Transistors: A Technology Computer-Aided Design Study

Eneman, Geert, Keersgieter, An De, Witters, Liesbeth, Mitard, Jerome, Vincent, Benjamin, Hikavyy, Andriy, Loo, Roger, Horiguchi, Naoto, Collaert, Nadine, Thean, Aaron

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 831 KB

english, 2013

4

[IEEE ESSDERC 2011 - 41st European Solid State Device Research Conference - Helsinki, Finland (2011.09.12-2011.09.16)] 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) - On the efficiency of stress techniques in gate-last N-type bulk FinFETs

Eneman, Geert, Collaert, Nadine, Veloso, Anabela, De Keersgieter, An, De Meyer, Kristin, Hoffmann, Thomas Y.

Year:

2011

Language:

english

File:

PDF, 1.16 MB

english, 2011

5

Influence of Back-Gate Bias and Process Conditions on the Gamma Degradation of the Transconductance of MuGFETs

Put, Sofie, Simoen, Eddy, Collaert, Nadine, De Keersgieter, An, Claeys, Corneel, Van Uffelen, Marco, Leroux, Paul

Journal:

IEEE Transactions on Nuclear Science

Year:

2010

Language:

english

File:

PDF, 999 KB

english, 2010

6

Electrical Characteristics of P-type Bulk Si Fin Field-Effect Transistor Using Solid-Source Doping with 1-nm Phosphosilicate Glass

Kikuchi, Yoshiaki, Chiarella, Thomas, De Roest, David, Blanquart, Timothee, De Keersgieter, An, Kenis, Karine, Peter, Antony, Ong, Patrick, Besien, Els, Tao, Zheng, Kim, Min-Soo, Kubicek, Stenfan, Che

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 464 KB

english, 2016

7

Doping Strategies for FinFETs

Pawlak, Bartek J., Duffy, Ray, De Keersgieter, An

Journal:

Materials Science Forum

Year:

2008

Language:

english

File:

PDF, 2.55 MB

english, 2008

8

Two- and Three-Dimensional Fully-Depleted Extension-Less Devices for Advanced Logic and Memory Applications

Veloso, Anabela, Keersgieter, An De, Aoulaiche, Marc, Jurczak, Malgorzata, Thean, Aaron, Horiguchi, Naoto

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 815 KB

english, 2013

9

[IEEE 2013 13th International Workshop on Junction Technology (IWJT) - Kyoto, Japan (2013.06.6-2013.06.7)] 2013 13th International Workshop on Junction Technology (IWJT) - Optimization of standard As ion implantation for NMOS Si bulk FinFETs extension

Sasaki, Yuichiro, De Keersgieter, An, Aik, Chew Soon, Chiarella, Thomas, Hellings, Geert, Togo, Mitsuhiro, Zschatzsch, Gerd, Thean, Aaron, Horiguchi, Naoto

Year:

2013

Language:

english

File:

PDF, 1.84 MB

english, 2013

10

[IEEE ESSDERC 2013 - 43rd European Solid State Device Research Conference - Bucharest, Romania (2013.09.16-2013.09.20)] 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) - STI and eSiGe source/drain epitaxy induced stress modeling in 28 nm technology with replacement gate (RMG) process

Jang, Doyoung, Bardon, Marie Garcia, Yakimets, Dmitry, Miyaguchi, Kenichi, De Keersgieter, An, Chiarella, Thomas, Ritzenthaler, Romain, Dehan, Morin, Mercha, Abdelkarim

Year:

2013

Language:

english

File:

PDF, 1.21 MB

english, 2013

11

[ECS 215th ECS Meeting - San Francisco, CA (May 24 - May 29, 2009)] ECS Transactions - Advanced FinFET Devices for Sub-32nm Technology Nodes: Characteristics and Integration Challenges

Veloso, Anabela, Collaert, Nadine, De Keersgieter, An, Witters, Liesbeth, Rooyackers, Rita, Van Dal, Mark J., Duffy, Ray, Pawlak, Bartek J., Lander, Rob J., Hoffmann, Thomas, Biesemans, Serge, Jurczak

Year:

2009

Language:

english

File:

PDF, 1.83 MB

english, 2009

12

Solid-source doping by using phosphosilicate glass into p-type bulk Si (100) substrate: Role of the capping SiO 2 barrier

Kikuchi, Yoshiaki, Peter, Antony, Pawlak, Bartlomiej Jan, De Keersgieter, An, Eyben, Pierre, Horiguchi, Naoto, Mocuta, Anda

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2018

Language:

english

File:

PDF, 694 KB

english, 2018

13

[IEEE 2018 IEEE International Memory Workshop (IMW) - Kyoto, Japan (2018.5.13-2018.5.16)] 2018 IEEE International Memory Workshop (IMW) - Cost Effective FinFET Platform for Stand Alone DRAM 1Y and Beyond Memory Periphery

Spessot, Alessio, Sharan, Neha, Oh, Hyungrock, Ritzenthaler, Romain, Litta, Eugenio Dentoni, O'Sullivan, Barry, Mallik, Arindam, De Keersgieter, An, Parvais, Bertrand, Sherazi, Yasser, Machkaoutsan, V

Year:

2018

Language:

english

File:

PDF, 2.34 MB

english, 2018

14

(Keynote) Gate-All-Around Nanowire & Nanosheet FETs for Advanced, Ultra-Scaled Technologies

Veloso, Anabela, Matagne, Philippe, Jang, Doyoung, Huynh-Bao, Trong, Chasin, Adrian, Simoen, Eddy, Eneman, Geert, De Keersgieter, An, Mertens, Hans, Horiguchi, Naoto

Journal:

ECS Transactions

Year:

2020

File:

PDF, 1.49 MB

2020

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